powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 dual igbtmod? compact igbt series module 4 00 amperes/1200 volts mg400 q2ys60a 1 5 /05 description: powerex dual igbtmod? compact igbt series modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge con? guration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli? ed system assembly and thermal management. features: over-current and over-temperature protection low v ce(sat) isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete part number from the table below -i.e. MG400Q2YS60A is a 1200v (v ces ), 400 ampere dual igbtmod? compact igbt series module. type current rating v ces amperes volts (x 20) mg 400 60 outline drawing and circuit diagram dimensions inches millimeters a 4.800.04 122.01.0 b 1.970.01 50.00.3 c 1.610.03 41.00.8 d 4.330.01 110.00.3 e 2.440.04 62.01.0 f 2.320.02 59.00.5 g 4.690.02 119.00.5 h 0.60 15.24 j 0.63 16.0 k 0.51 13.0 l 0.24 6.0 m 0.22 dia. 5.5 dia. n 1.420.03 36.00.8 dimensions inches millimeters p m6 m6 q 0.790.03 20.00.8 r 1.020.03 26.00.8 s 1.440.03 36.70.8 t 0.24 rad. 6.0 rad. u 0.02 0.64 v 0.60 15.3 w 0.410.03 10.50.8 x 1.02 -0.01/+0.04 26.0 -0.3/+1.0 y 1.48 -0.02/+0.04 37.5 -0.5/+1.0 z 0.01 dia. 3.0 dia. aa 1.000.023 25.40.6 bb 0.10 2.54 7 5 3 1 det ail "a" a b l m e c d f g y aa bb bb bb q x x j h k e2 c1 c2e1 det ail "a" 8 6 4 2 5 6 7 4 1 2 3 e2 ot f o f o c1 e1/c2 w w z u v p n r q r s 1 g(l) 2 f o (l ) 5 g(h) 6 f o (h ) 3 e(l) 4 v d 7 e(h) 8 open signal terminal t
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A dual igbtmod? compact igbt series module 4 0 0 amperes/1200 volts 2 5 /05 absolute maximum ratings, t j = 25c unless otherwise speci?ed characteristics symbol MG400Q2YS60A units c e eg t e sdss i eb sdsisb i g eb sbb i bvbddib v t vb igbt inverter sector collector-emitter voltage v ces volts gate-emitter voltage v ges volts collector current (t c c) i c amperes pea collector current (t c c) i cp amperes emitter current (t c c) i e amperes pea emitter current (t c c) i em amperes collector dissipation (t c c) p c watts igbt control sector control voltage (ot) v d volts fault input voltage vf o volts fault input current if o ma electrical and mechanical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units igbt inverter sector gate leaage current i ges v ge v, v ce v - ma v ge v, v ce v na collector-emitter cutoff current i ces v ce v, v ge v . ma gate-emitter cutoff voltage v ge(off) v ce v, i c ma . . . volts collector-emitter saturation voltage v ce(sat) v ge v, i c a, t c . . volts v ge v, i c a, t c . volts input capacitance c ies v ce v, v ge v, f mh , pf inductive load t d(on) . . s switching t off v cc v, i c a, . s times t f v ge v, r g .
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A dual igbtmod? compact igbt series module 4 0 0 amperes/1200 volts 3 5 /05 electrical and mechanical characteristics, t j = 25c unless otherwise speci?ed characteristics symbol test conditions min. typ. max. units control sector fault output current o c v ge v a over-temperature o t c fault output dela time t d(fo) v cc v, v ge v s thermal characteristics characteristic symbol condition min. typ. max. units b eu sb i i e sb i i i b e i i i recommended conditions for use characteristic symbol condition value units bvb v beb collector-emitter saturation voltage characteristics (typical) collector current, i c , (amperes) output characteristics (typical) collector-emitter voltage, v ce(sat) , (volts) t c t c free-wheel characteristics (typical) v ge v t c t c t -c i c a i c a i c a ga te-emitter volt age, v ge , (v ol ts) collect or-emitter sa tura tion volt ag e, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) t c i c a i c a i c a ga te-emitter volt age, v ge , (v ol ts) collect or-emitter sa tura tion volt ag e, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) t -c i c a i c a i c a collector current, i c , (amperes) output characteristics (typical) collector-emitter voltage, v ce(sat) , (volts) t c v ge v v v v v v v ge v v v v v v forward current, i f , (amperes) forward voltage, v f , (volts)
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A dual igbtmod? compact igbt series module 4 0 0 amperes/1200 volts 4 5 /05 10 4 10 3 10 2 10 1 0 400 300 200 100 collector current, i c , (amperes) switching time, t f , ( s) fall time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5. 1 ? t j = 25c t j = 125c 10 3 10 2 10 1 0 400 300 200 100 collector current, i c , (amperes) switching time, t r , ( s) rise time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 ? t j = 25 c t j = 125 c 10 4 10 3 10 2 0 400 300 200 100 collector current, i c , (amperes) switching time, t d(off) , ( s) turn-off delay time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 ? t j = 25 c t j = 125 c 10 4 10 3 10 2 0 400 300 200 100 collector current, i c , (amperes) switching time, t d(on) , ( s) turn-on delay time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 ? t j = 25c t j = 125c 10 4 10 3 10 2 0 2 0 10 15 5 0 20 10 15 5 gate resistance, r g , ( ? ) switching time, t of f , ( s) turn-off time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25c t j = 125c 10 4 10 3 10 2 gate resistance, r g , ( ? ) switching time, t on , ( s) turn-on time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25c t j = 125c 10 4 10 3 10 2 0 400 300 200 100 collector current, i c , (amperes) 8 6 4 2 0 1 4 12 10 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 200 400 600 800 t j = 25c t j = 125c t j = -40c collector current, i c , (amperes) switching time, t of f , ( s) turn-off time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 ? t j = 25c t j = 125c 10 4 10 3 10 2 0 400 300 200 100 collector current, i c , (amperes) switching time, t on , ( s) turn-on time vs. collector current (typical) v cc = 600v v ge = 15v r g = 5. 1 ? t j = 25c t j = 125c v ce = 5v
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A dual igbtmod? compact igbt series module 4 0 0 amperes/1200 volts 5 5 /05 10 2 10 1 10 0 0 400 200 300 100 collector current, i c , (amperes) switching loss, e off , (mj/pulse) switching loss (off) vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 w t j = 25c t j = 125c 10 0 10 2 10 1 switching loss, e off , (mj/pulse) switching loss (off) vs. gate resistance (typical) gate resistance, r g , ( w ) v cc = 600v v ge = 15v r g = 5.1 w t j = 25c t j = 125c 10 2 10 1 10 0 0 400 200 300 100 collector current, i c , (amperes) switching loss, e on , (mj/pulse) switching loss (on) vs. collector current (typical) v cc = 600v v ge = 15v r g = 5.1 w t j = 25c t j = 125c 10 0 10 2 10 1 switching loss, e on , (mj/pulse) switching loss (on) vs. gate resistance (typical) gate resistance, r g , ( w ) v cc = 600v v ge = 15v r g = 5.1 w t j = 25c t j = 125c 10 3 10 2 10 1 0 400 200 300 100 emitter current, i e , (amperes) reverse recovery current, i rr , (amperes) reverse recovery current (typical) v cc = 600v v ge = 15v r g = 5.1 w t j = 25c t j = 125c 10 3 10 2 10 1 switching time, t r , ( m s) rise time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t d(off) , ( m s) turn-off delay time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25 c t j = 125 c 10 4 10 3 10 2 switching time, t d(on) , ( m s) turn-on delay time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25 c t j = 125 c 10 3 10 2 10 1 switching time, t f , ( m s) fall time vs. gate resistance (typical) v cc = 600v v ge = 15v i c = 400a t j = 25 c t j = 125 c 0 2 0 10 15 5 0 20 10 15 5 gate resistance, r g , ( w ) gate resistance, r g , ( w ) 0 2 0 10 15 5 0 2 0 10 15 5 0 20 10 15 5 gate resistance, r g , ( w ) 0 2 0 10 15 5 gate resistance, r g , ( w )
powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 MG400Q2YS60A dual igbtmod? compact igbt series module 4 0 0 amperes/1200 volts 6 5 /05 collect or-emitter volt ag e, v ce , (v ol ts) collect or current , i ic , (amperes) 0 400 800 1200 1600 reverse bias safe operation area (typical) 1000 200 0 800 600 400 v ge = 15v r g = 5.1 w t j 125c gate-emitter voltage, v ge , (volts) 0 gate charge, q g , (nc) gate-emitter voltage vs. gate charge (typical) 0 4 8 12 16 20 1000 3000 2000 400v 200v 600v v ce = 0v collector-emitter voltage, v ce , (volts) 0 gate charge, q g , (nc) collector-emitter voltage vs. gate charge (typical) 0 200 400 600 800 1000 1000 3000 2000 i c = 400a r l = 1.5 w t j = 25c i c = 400a r l = 1.5 w t j = 25c time, (s ) transient imped ance, rt h (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (igbt) 10 0 10 -2 10 -4 10 -3 10 -1 time, (s ) transient imped ance, rt h (j-c) 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance characteristics (fwdi) 10 0 10 -2 10 -4 10 -3 10 -1 single pulse standard value = r th(j-c ) q = 0.033 c/ w single pulse standard value = r th(j-c) d = 0.068 c/ w t c = 25 c t c = 25 c 10 2 10 1 10 0 0 400 200 300 100 emitter current, i e , (amperes) emitter current, i e , (amperes) reverse recovery loss, e dsw , (mj/pulse) reverse recovery loss vs. forward current (typical ) v cc = 600v v ge = 15v r g = 5.1 w t j = 25 c t j = 125 c 10 3 10 2 10 1 0 400 200 300 100 reverse recovery time, t rr , (ns) reverse recovery time (typical) v cc = 600v v ge = 15v r g = 5.1 w t j = 25 c t j = 125 c collect or-emitter volt age, v ce , (v ol ts) cap acit ance, c ie s , c oes , c res , (pf) 10 -2 10 -1 10 0 10 1 10 2 capacitance vs. collector-emitter voltage (typical) 10 5 10 3 10 2 10 4 c ie s c oe s c re s v ge = 0v f = 1mhz t c = 25 c
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